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Ion assistance effects on electron beam deposited MgF2 films

TitleIon assistance effects on electron beam deposited MgF2 films
Publication TypeArticolo su Rivista peer-reviewed
Year of Publication2002
AuthorsAlvisi, Marco, de Tomasi F., A. Patria Della, Di Giulio M., Masetti E., Perrone M.R., Protopapa Maria Lucia, and Tepore A.
JournalJournal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume20
Pagination714-720
ISSN07342101
KeywordsAnode voltage, Electron beams, evaporation, Ion assisted electron beam evaporation, Ion beam assisted deposition, Laser damage, Laser damage fluence, Light extinction, Light reflection, Magnesium compounds, Morphology, Refractive index, Scanning electron microscopy, Thin films, Threshold voltage, Transmittance, X ray diffraction analysis
Abstract

Thin films of MgF2 of about 300 nm thickness were deposited by the electron beam evaporation technique, without employing an assisting ion beam and at different assisting ion beam parameters. The role of the assisting ion beam on the film optical and structural properties and on the film resistance to laser damage was studied. Measurements were performed on samples soon after the film deposition and on samples left for 3 months under uncontrolled environmental conditions. The resulting data was analyzed in detail.

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URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0036565402&doi=10.1116%2f1.1464836&partnerID=40&md5=6401fdda01adfff859626e01a4e3e241
DOI10.1116/1.1464836
Citation KeyAlvisi2002714