The viability of laser scribing as a tool for selective patterning of CIS/Mo/SLS thin film structures is demonstrated. Optical microscopy, talystep, SEM and microprobe analysis are used to determine the dependence of scribing quality on the basic process parameters. Frontal scribing and back scribing configurations are used for Mo-patterning. Optimum scribing for CIS/SLS and Mo are found to be roughly equivalent. Consequently, with Q-switched operation, selective scribing of an individual layer is impossible. With cw laser, considerable results are obtained. Finally, scribes are conducted on CIS/Mo/SLS layer and the resulting selective removal of the CIS layer is illustrated.