| Titolo | Effects of substrate treatment and growth conditions on structure, morphology, and luminescence of homoepitaxial ZnTe deposited by metalorganic vapor phase epitaxy |
|---|---|
| Tipo di pubblicazione | Articolo su Rivista peer-reviewed |
| Anno di Pubblicazione | 2004 |
| Autori | Traversa, M., Lovergine N., Prete P., Yoshino K., Di Luccio Tiziana, Scalia G., Pentlmalli M., Tapfer Leander, Morales P., and Mancini A.M. |
| Rivista | Journal of Applied Physics |
| Volume | 96 |
| Paginazione | 1230-1237 |
| ISSN | 00218979 |
| Parole chiave | Band-edge (BE) emissions, Crystal structure, diffusion, Donor-acceptor pair (DAP) bands, Electron beam energy, Electron beams, Energy gap, Excitons, Light emitting diodes, Metallorganic vapor phase epitaxy, Morphology, Phonons, Photoluminescence, Photomultipliers, Scanning electron microscopy, Semiconductor doping, Single crystals, Surface kinetics, X ray diffraction analysis, Zinc compounds |
| Abstract | The influence of substrate treatment and growth conditions on structure luminescence, morphology, and structure of homoepitaxial ZnTe epilayers were investigated. The ZnTe layers were found to grow on (100)ZnTe:P wafers using metalorganic vapor phase epitaxy. It was observed that the donor-acceptor pair (DAP) band intensity correlated with that of the 2.3776 eV donor and the 2.3706 acceptor bound exciton lines. It was also observed that the hillock size and density of the epilayers was increased with growth temperature and a highly faceted epilayer surface was obtained at 400°C. |
| Note | cited By 10 |
| URL | https://www.scopus.com/inward/record.uri?eid=2-s2.0-3242720717&doi=10.1063%2f1.1762711&partnerID=40&md5=28ad57b71d0d9c54674992161735b55a |
| DOI | 10.1063/1.1762711 |
| Citation Key | Traversa20041230 |
