| Titolo | T linearity of in-plane resistivity in Bi 2Sr 2CaCu 2O 8+δ thin films |
|---|---|
| Tipo di pubblicazione | Articolo su Rivista peer-reviewed |
| Anno di Pubblicazione | 2005 |
| Autori | Oh, S., Di Luccio Tiziana, and Eckstein J.N. |
| Rivista | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 71 |
| ISSN | 10980121 |
| Parole chiave | article, bismuth, Calcium, Copper, film, linear system, molecular dynamics, Oxygen, quantum mechanics, quantum yield, Strontium, superconductor, Temperature sensitivity, Thermal conductivity |
| Abstract | We performed a temperature and doping-dependent study of in-plane dc resistivity (IDCR) on molecular beam epitaxy grown Bi 2Sr 2CaCu 2O 8+δ thin films. By analyzing the temperature dependence of normal state IDCR as a function of doping level, we show that long-known T-linear dependence of normal state IDCR occurs not at the optimal doping (p=0.16/Cu) but at an overdoping of p=0.19/Cu, which coincides with the recently proposed putative quantum critical point. This observation suggests that p=0.19 may be a sample-independent critical doping level at least for bilayer cuprate systems. ©2005 The American Physical Society. |
| Note | cited By 5 |
| URL | https://www.scopus.com/inward/record.uri?eid=2-s2.0-15744404887&doi=10.1103%2fPhysRevB.71.052504&partnerID=40&md5=8d2144ad12dd4a7a5f140cdb54c992e6 |
| DOI | 10.1103/PhysRevB.71.052504 |
| Citation Key | Oh2005 |
