Sorry, you need to enable JavaScript to visit this website.

Fabrication of superconducting Nd2-xCexCuO 4±δ films by automated dc sputtering technique

TitoloFabrication of superconducting Nd2-xCexCuO 4±δ films by automated dc sputtering technique
Tipo di pubblicazioneArticolo su Rivista peer-reviewed
Anno di Pubblicazione2013
AutoriGuarino, A., Patimo G., Vecchione A., Di Luccio Tiziana, and Nigro A.
RivistaPhysica C: Superconductivity and its Applications
Volume495
Paginazione146-152
ISSN09214534
Parole chiaveAutomation, Backscattered electrons, Crystalline structure, Deposition conditions, Electron-doped, Epitaxial growth, High resolution X ray diffraction, Interfaces (materials), Semiconductor doping, Sputtering systems, Structural characterization, Superconducting films, Superconductivity, X ray diffraction, X-ray reflectivity measurements
Abstract

Superconducting electron-doped Nd2-xCexCuO 4±δ films have been successfully prepared on (0 0 1) SrTiO3 substrates by an automated dc sputtering system. The composition of the samples has been measured by wavelength dispersive spectroscopy, and the crystalline structure has been investigated by high resolution X-ray diffraction technique. Measurements by backscattered electrons has been also used in order to deeply analyze the microstructure of the samples. We have found that the quality of the films is highly sensitive to the deposition conditions and that the superconductivity is reached only after suitable heat treatments at temperature above to 850 C in an oxygen-reducing atmosphere. The films deposited with the optimized conditions show a high degree of epitaxial growth, moreover an increase of c lattice parameter is found in all the superconducting samples. X-ray reflectivity measurements on thin films by using synchrotron radiation proved that smooth surfaces (roughness less than 2 nm) and neat interfaces characterize the films through the whole thickness. © 2013 Elsevier B.V. All rights reserved.

Note

cited By 3

URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84885346100&doi=10.1016%2fj.physc.2013.09.010&partnerID=40&md5=193b1e0b26f02401a357101eb235e568
DOI10.1016/j.physc.2013.09.010
Citation KeyGuarino2013146