Sorry, you need to enable JavaScript to visit this website.

Impact of proton irradiation on photoluminescent properties of C-doped ZrO2 films prepared by ALD

TitoloImpact of proton irradiation on photoluminescent properties of C-doped ZrO2 films prepared by ALD
Tipo di pubblicazioneArticolo su Rivista peer-reviewed
Anno di Pubblicazione2024
AutoriSytchkova, Anna, Protopapa Maria Lucia, Kolev Hristo, Burresi Emiliano, Olivero P., Dunatov Toni, Siketić Zdravko, Tapfer Leander, Wang Zhihao, He Hongbo, and Wang Yanzhi
Data di pubblicazioneJan-06-2024
Type of ArticleArticle

Amorphous C-doped zirconia thin films grown by ALD technique on fused silica substrates have high transmittance and significant photoluminescence (PL) capacity suitable for application as a transparent material to convert high energy into lower energy photons as well as an optical sensor of radiation. Due to carbon doping, zirconia films present three main PL transitions: Transition I and II at λem = 450 nm (λexc = 200 and 270 nm), related to sp3 and sp2 C–C bonds, and Transition III at λem = 450 nm (λexc = 300 nm) that can be assigned to C[dbnd]O bonds which introduce n levels in the π- π* gap. Protons with energy of 100 keV and two values of fluence (1∙1012 p+/cm2 and 5∙1014 p+/cm2) were used to modify the film properties. The changes induced by the radiation in the chemical composition of the films have been monitored as a function of irradiation dose using in-depth resolved XPS analysis which evidenced modification of C–Zr, Zr–O, C–H, C–C/C[dbnd]C and C[dbnd]O bonds. We demonstrate that C–Zr bonds formed in the film depth are cleaved by protonation in favor of Zr–O, C–H and C[dbnd]O bonds establishment. As a consequence, more defect levels are formed in the π- π* gap of carbon. Consequently, the emission due to Transitions III becomes more intense for high energy doses, getting intensity values close to Transitions I/II. © 2024 The Authors


All Open Access, Hybrid Gold Open Access

Titolo breveVacuum
Citation Key12335