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Influence of the assisting-ion-beam parameters on the laser-damage threshold of SiO2 films

TitoloInfluence of the assisting-ion-beam parameters on the laser-damage threshold of SiO2 films
Tipo di pubblicazioneArticolo su Rivista peer-reviewed
Anno di Pubblicazione1999
AutoriAlvisi, Marco, De Nunzio G., Perrone M.R., Rizzo Antonella, Scaglione S., and Vasanelli L.
RivistaThin Solid Films
Volume338
Paginazione269-275
ISSN00406090
Parole chiaveDual-ion-beam sputtering, Gas lasers, Ion beams, Laser damage, Optical films, Photoacoustic effect, Photoacoustic mirage technique, Silica, Sputter deposition, Thin films
Abstract

Silica thin films have been deposited by a dual-ion-beam sputtering technique using argon or xenon ions mixed with oxygen ions in the assisting beam and the role of the assisting-ion-beam parameters on the laser-damage-threshold at 308 nm (XeCl laser) has been investigated. It is shown that a proper choice of these parameters allows a considerable increase of the laser-induced damage threshold. Lower damage thresholds (1 J/cm2) were found for the xenon/oxygen assisted samples. Whereas, the highest damage threshold (8 J/cm2) was found for the argon-ion assisted sample and its value was also much higher than that (2.9 J/cm2) of the non-assisted films. Damage thresholds have been determined by the photoacoustic mirage technique and it is demonstrated that this technique can provide useful information on the mechanisms responsible for laser damage. © 1999 Elsevier Science S.A. All rights reserved.

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URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0032715345&partnerID=40&md5=0705925d9b5388f78ef513a9c63da491
Citation KeyAlvisi1999269