GaP-interlayer formation on epitaxial GaAs(100) surfaces in MOVPE ambient, Döscher, H., Hens P., Beyer A., Tapfer Leander, Volz K., and Stolz W. , Journal of Crystal Growth, Volume 464, p.2-7, (2017)

Structural characterization of ZnSe/ZnMgSe MQWs grown on (1 0 0)GaAs by low pressure MOVPE, Prete, P., Lovergine N., Di Luccio Tiziana, Tapfer Leander, and Mancini A.M. , Journal of Crystal Growth, Volume 248, Number SUPPL., Berlin, p.56-61, (2003)

Structural properties of InxGa1-xN/GaN and AlxGa1-xN/GaN MQWs studied by XRD, Tagliente, M.A., Tapfer Leander, Waltereit P., Brandt O., and Ploog K.-H. , Journal of Physics D: Applied Physics, Volume 36, Number 10 A, p.A192-A197, (2003)

Properties of (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy, Brandt, O., Waltereit P., Dhar S., Jahn U., Sun Y.J., Trampert A., Ploog K.H., Tagliente M.A., and Tapfer Leander , Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Volume 20, Number 4, Santa Fe, NM, p.1626-1639, (2002)

Strain field and chemical composition determination of InGaN/GaN and AlGaN/GaN multiple quantum wells grown on SiC substrates, Tagliente, M.A., De Caro L., Tapfer Leander, Waltereit P., Brandt O., and Ploog K.-H. , Journal of Applied Physics, Volume 92, Number 1, p.70-76, (2002)