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Structural properties of InxGa1-xN/GaN and AlxGa1-xN/GaN MQWs studied by XRD, Tagliente, M.A., Tapfer Leander, Waltereit P., Brandt O., and Ploog K.-H. , Journal of Physics D: Applied Physics, Volume 36, Number 10 A, p.A192-A197, (2003)

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X-ray diffraction analysis fo GaAs/AlAs multilayer structures grown by molecular beam epitaxy on (311) and (210) GaAs surfaces, Tagliente, M.A., De Caro L., Tapfer Leander, Nötzel R., Fischer A., and Ploog K. , Solid State Electronics, Volume 37, Number 4-6, p.747-751, (1994)

Experimental and theoretical investigation of the order-disorder transformation in Ni3Al, Cardellini, F., Cleri F., Mazzone G., Montone Amelia, and Rosato V. , Journal of Materials Research, Volume 8, Number 10, p.2504-2509, (1993)